BJTs - Transistor Lưỡng Cực PNP CAO ÁP TRA onsemi NSVMMBT5401WT1G

Technology: Si

Unit Weight: 6 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 400 mW

DC Current Gain hFE Max: 200

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 160 V

Continuous Collector Current: - 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 150 V

Collector-Emitter Saturation Voltage: 500 mV