BJTs - Transistor Lưỡng Cực BIP PNP 3A 50V DÙNG CHO Ô TÔ onsemi NSVS50030SB3T1G

Technology: Si

Unit Weight: 12.750 mg

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.1 W

DC Current Gain hFE Max: 560

Gain Bandwidth Product fT: 360 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: - 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 175 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 185 mV