SiC MOSFETS SIC MOS D2PAK-7L 32MOHM 650V M3S onsemi NTBG032N065M3S

Fall Time: 9 ns

Rise Time: 12 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 55 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 200 W

Vgs - Gate-Source Voltage: - 8 V, + 22 V

Typical Turn-On Delay Time: 8.8 ns

Typical Turn-Off Delay Time: 31 ns

Id - Continuous Drain Current: 52 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 44 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4 V