MOSFETs T1 XLLGA6 ĐÔI onsemi NTND31225CZTAG

Fall Time: 80 ns, 171 ns

Rise Time: 25.5 ns, 71 ns

Technology: Si

Unit Weight: 2.600 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 125 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 16.5 ns, 37 ns

Typical Turn-Off Delay Time: 142 ns, 280 ns

Id - Continuous Drain Current: 220 mA, 127 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 0.48 S, 0.35 S

Rds On - Drain-Source Resistance: 800 mOhms, 2.1 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V