Power MOSFET onsemi NTQD6968NR2G

Type: Power MOSFET

FET Feature: Logic Level Gate

Mounting Type: Surface Mount

Power-Maximum: 1.39W

Operating temperature: -55 to 150C

Drain to Source voltage: 20V

Continuous drain current: 6.2A

Current - Drain (Id) (25°C): 6.2A

Field-effect transistor type: 2N-Channel(Dual)

Gate Charge - (when applying Vgs): 17nC@4.5V

Drain to Source on-state resistance: 22mOhm

On Voltage - (Vgs when Id is applied): 1.2V@250uA

On Resistance - (Rds when Id,Vgs is applied): 22mOhm@7A|4.5V

Input Capacitance - (Ciss when Vds is applied): 630pF@16V