Mô-đun MOSFET Silicon Carbide (SiC) - EliteSiC, 8 mohm, 1200V, M3S, Kiến trúc TNPC, Đóng gói F2 onsemi NXH008T120M3F2PTHG

Fall Time: 15 ns

Rise Time: 20.6 ns

Technology: SiC

Mounting Style: Press Fit

Vf - Forward Voltage: 4.8 V

Pd - Power Dissipation: 371 W

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Typical Turn-On Delay Time: 41.5 ns

Typical Turn-Off Delay Time: 137 ns

Id - Continuous Drain Current: 129 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 8.5 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V