Transistor JFET kênh P onsemi SMMBFJ177LT1G

Technology: Si

Unit Weight: 201 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: P-Channel

Pd - Power Dissipation: 225 mW

Gate-Source Cutoff Voltage: 2.5 V

Drain-Source Current at Vgs=0: - 20 mA

Id - Continuous Drain Current: - 1 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 300 Ohms

Vgs - Gate-Source Breakdown Voltage: 30 V