Transistor Lưỡng cực BJTs SS GP XSTR NPN 40V onsemi SMMBT2222AWT1G

Technology: Si

Unit Weight: 28 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 150 mW

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 75 V

Continuous Collector Current: 600 mA

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 35

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 1 V