JFET NCH J-FET SOT-883 onsemi TF412ST5G

Technology: Si

Unit Weight: 0.694 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 100 mW

Gate-Source Cutoff Voltage: - 800 mV

Maximum Drain Gate Voltage: - 30 V

Drain-Source Current at Vgs=0: 3 mA

Id - Continuous Drain Current: 10 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3 mS

Vgs - Gate-Source Breakdown Voltage: - 30 V

Vds - Drain-Source Breakdown Voltage: 30 V