MOSFET kênh N 60V chế độ tăng cường - bảo vệ chống tĩnh điện (ESD) PANJIT 2N7002K_R2_10001

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 800 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 350 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 20 ns

Typical Turn-Off Delay Time: 40 ns

Id - Continuous Drain Current: 300 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 100 mS

Rds On - Drain-Source Resistance: 4 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V