Cặp Transistor Lưỡng Cực Đóng Gói Bề Mặt Đôi NPN PNP (Bổ Sung) VCE-45 45V IC-100 100mA PANJIT BC847BPN_R1_00001

Technology: Si

Unit Weight: 8 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 450

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 6 V, 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: - 100 mA, 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 400 mV, 700 mV