BJTs - Transistor lưỡng cực 2N3904 Parallax 500-00001

Technology: Si

Unit Weight: 3 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1.5 W

DC Current Gain hFE Max: 150

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 200 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 200 mV