FET SiC 750V/44mOhms, SICFET, G4, TOLL Qorvo UJ4C075044L8SSB

Fall Time: 11 ns

Rise Time: 18 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 37.8 nC

Transistor Polarity: N-Channel

Pd - Power Dissipation: 181 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 119 ns

Id - Continuous Drain Current: 35.6 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 44 mOhms

Vds - Drain-Source Breakdown Voltage: 750 V

Vgs th - Gate-Source Threshold Voltage: 6 V