MOSFET MOSFET SOP-8 Rectron RM3010-T

Fall Time: 80 ns

Rise Time: 20 ns

Technology: Si

Unit Weight: 83 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 13 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 30 ns

Typical Turn-Off Delay Time: 100 ns

Id - Continuous Drain Current: 10 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 15 S

Rds On - Drain-Source Resistance: 12 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V