MOSFETs SCM_DUMMY Renesas Electronics RJF0410JPE-00#J3

Width: 10 mm

Height: 4.4 mm

Length: 10.2 mm

Fall Time: 13.3 us

Rise Time: 99.3 us

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 100 W

Vgs - Gate-Source Voltage: - 2.5 V, + 16 V

Typical Turn-On Delay Time: 24.7 us

Typical Turn-Off Delay Time: 7.44 us

Id - Continuous Drain Current: 74 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 20 S

Rds On - Drain-Source Resistance: 13 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V