MOSFETs CÔNG SUẤT TRS1 LV-MOS TO220FP Renesas Electronics RJK0703DPP-A0#T2

Width: 10 mm

Height: 4.5 mm

Length: 15 mm

Fall Time: 11 ns

Rise Time: 10 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 56 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 25 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 30 ns

Typical Turn-Off Delay Time: 60 ns

Id - Continuous Drain Current: 70 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 90 S

Rds On - Drain-Source Resistance: 6.7 mOhms

Vds - Drain-Source Breakdown Voltage: 75 V

Vgs th - Gate-Source Threshold Voltage: 4 V