MOSFET 200V, 36mOhm, TO-220FN Renesas Electronics RJK2017DPP-M0#T2

Width: 10 mm

Height: 4.5 mm

Length: 15 mm

Fall Time: 40 ns

Rise Time: 40 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 66 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 30 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 50 ns

Typical Turn-Off Delay Time: 95 ns

Id - Continuous Drain Current: 45 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 47 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 4 V