MOSFET CÔNG SUẤT TRS1 HV-MOS TO220FP MOS AP5H CÔNG SUẤT Renesas Electronics RJK5035DPP-A0#T2

Width: 10 mm

Height: 4.5 mm

Length: 15 mm

Fall Time: 7.7 ns

Rise Time: 8.6 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 23 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 29.5 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 13.3 ns

Typical Turn-Off Delay Time: 37.6 ns

Id - Continuous Drain Current: 10 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 850 mOhms

Vds - Drain-Source Breakdown Voltage: 500 V

Vgs th - Gate-Source Threshold Voltage: 5 V