Transistor lưỡng cực BJTs SOT346T 80V 0.7A công suất trung bình ROHM Semiconductor 2SAR514RHZGTL

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 390 at - 100 mA, - 3 V

Gain Bandwidth Product fT: 380 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 80 V

Maximum DC Collector Current: 700 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120 at - 100 mA, - 3 V

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 400 mV