BJTs - Transistor Lưỡng Cực PNP -50V Vceo -2A Ic MPT3 ROHM Semiconductor 2SAR554P5T100

Technology: Si

Unit Weight: 175 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 390 at - 100 mA, - 3 V

Gain Bandwidth Product fT: 340 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 80 V

Maximum DC Collector Current: 1.5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120 at - 100 mA, - 3 V

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 400 mV