BJTs - Transistor Lưỡng Cực PNP 12V 4A ROHM Semiconductor 2SB1707TL

Width: 1.6 mm

Height: 0.85 mm

Length: 2.9 mm

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 680 at - 200 mA, - 2 V

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 15 V

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 270 at - 200 mA, - 2 V

Collector- Emitter Voltage VCEO Max: 12 V

Collector-Emitter Saturation Voltage: 250 mV