BJTs - Transistor Lưỡng cực NPN 50V 3A 10W TO-252(DPAK) ROHM Semiconductor 2SCR573D3FRATL

Technology: Si

Unit Weight: 1.430 g

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 10 W

DC Current Gain hFE Max: 450 at 100 mA, 3 V

Gain Bandwidth Product fT: 320 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 3 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 180 at 100 mA, 3 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 350 mV