Mô-đun Silicon Carbide (SiC) 1200V Vdss; 576A ID SiC Mod; SICSTD02 ROHM Semiconductor BSM600C12P3G201

Fall Time: 65 ns

Rise Time: 50 ns

Technology: SiC

Unit Weight: 513.155 g

Configuration: Chopper

Mounting Style: Screw Mount

Typical Delay Time: 70 ns

Transistor Polarity: N-Channel

Vf - Forward Voltage: 1.8 V at 600 A

Vr - Reverse Voltage: 1.2 kV

Pd - Power Dissipation: 2.46 kW

Vgs - Gate-Source Voltage: - 4 V, + 22 V

Typical Turn-On Delay Time: 70 ns

Typical Turn-Off Delay Time: 240 ns

Id - Continuous Drain Current: 600 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 2.7 V