BJTs - Transistor Lưỡng Cực Đôi NPN 30V 50MA ROHM Semiconductor EMX4T2R

Width: 1.2 mm

Height: 0.5 mm

Length: 1.6 mm

Technology: Si

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 180 at 10 mA, 10 V

Gain Bandwidth Product fT: 1.5 GHz

Emitter- Base Voltage VEBO: 3 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 56 at 10 mA, 10 V

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 500 mV