Transistor Lưỡng Cực BJTs GP BJT PNP 12V 0.5A 6 Chân ROHM Semiconductor IMT18T110

Width: 1.6 mm

Height: 1.1 mm

Length: 2.9 mm

Technology: Si

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 680 at - 10 mA, - 2 V

Gain Bandwidth Product fT: 260 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 15 V

Continuous Collector Current: - 500 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 270 at - 10 mA, - 2 V

Collector- Emitter Voltage VCEO Max: 12 V

Collector-Emitter Saturation Voltage: 250 mV