MOSFET 2N-CH 30V 1A TSMT6 ROHM Semiconductor QS6K1TR

Width: 1.6 mm

Height: 0.85 mm

Length: 2.9 mm

Fall Time: 6 ns

Rise Time: 7 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 1.7 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.25 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 7 ns

Typical Turn-Off Delay Time: 15 ns

Id - Continuous Drain Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1 S

Rds On - Drain-Source Resistance: 238 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V