MOSFETs RD3R05BBH là MOSFET công suất với điện trở dẫn thấp và gói công suất cao, phù hợp cho chuyển mạch. ROHM Semiconductor RD3R05BBHTL1

Fall Time: 22 ns

Rise Time: 14 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 37 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 89 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 24 ns

Typical Turn-Off Delay Time: 56 ns

Id - Continuous Drain Current: 50 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 35 mOhms

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: 4 V