MOSFET Công Suất Điều Khiển 1.5V MOSFET Nch ROHM Semiconductor RQ1C065UNTR

Width: 2.4 mm

Height: 0.85 mm

Length: 3 mm

Fall Time: 25 ns

Rise Time: 30 ns

Technology: Si

Unit Weight: 10 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-channel

Qg - Gate Charge: 11 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.5 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 7 ns

Typical Turn-Off Delay Time: 70 ns

Id - Continuous Drain Current: 6.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 6 S

Rds On - Drain-Source Resistance: 22 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V