MOSFET P-CH 30V 200MA ROHM Semiconductor RSM002P03T2L

Width: 0.8 mm

Height: 0.5 mm

Length: 1.2 mm

Fall Time: 40 ns

Rise Time: 5 ns

Technology: Si

Unit Weight: 1.275 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel MOSFET

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 150 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 30 ns

Id - Continuous Drain Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 200 mS

Rds On - Drain-Source Resistance: 1.4 Ohms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V