Điốt Schottky Carbide Silicon 650V Thế hệ thứ 3 SiC SBD 4A 6nC TO-220ACP ROHM Semiconductor SCS304APC9

Technology: SiC

Unit Weight: 1.800 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

If - Forward Current: 4 A

Ir - Reverse Current: 20 uA

Vf - Forward Voltage: 1.5 V

Vr - Reverse Voltage: 650 V

Pd - Power Dissipation: 34 W

Ifsm - Forward Surge Current: 27 A

Maximum Operating Temperature: + 175 C

Vrrm - Repetitive Reverse Voltage: 650 V