MOSFETs -40V Đôi Pch+Pch, SOP8, MOSFET Công Suất ROHM Semiconductor SH8JB5TB1

Fall Time: 74 ns

Rise Time: 45 ns

Technology: Si

Unit Weight: 83 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 51 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 14 ns

Typical Turn-Off Delay Time: 130 ns

Id - Continuous Drain Current: 8.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 12 S

Rds On - Drain-Source Resistance: 15.3 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V