SiC MOSFETS 1200V, 18mOhm, TO-247-4L MOSFET SemiQ GP2T020A120H

Fall Time: 19 ns

Rise Time: 5 ns

Technology: SiC

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 216 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 564 W

Vgs - Gate-Source Voltage: - 10 V, + 25 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 38 ns

Id - Continuous Drain Current: 119 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 26 S

Rds On - Drain-Source Resistance: 18 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4 V