SiC MOSFETS SiC MOSFET 1200V 80mohm TO-247-4L SemiQ GP2T080A120H

Fall Time: 10 ns

Rise Time: 4 ns

Technology: SiC

Channel Mode: Depletion

REACH - SVHC: Details

Mounting Style: Through Hole

Qg - Gate Charge: 61 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 188 W

Vgs - Gate-Source Voltage: - 10 V, + 25 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 15 ns

Id - Continuous Drain Current: 35 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 77 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4 V