Transistor Lưỡng Cực NPN Thế Hệ Mới Chuyên Dùng Làm Công Tắc STMicroelectronics MJD3055T4

Width: 6.2 mm

Height: 2.4 mm

Length: 6.6 mm

Technology: Si

Unit Weight: 1.800 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 20 W

DC Current Gain hFE Max: 100

Gain Bandwidth Product fT: 2 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 70 V

Continuous Collector Current: 10 A

Maximum DC Collector Current: 10 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 1.1 V