MOSFET công suất RF 120 W 50 V Transistor LDMOS công suất RF từ HF đến 1,5 GHz STMicroelectronics RF5L15120CB4

Gain: 20 dB

Technology: Si

Output Power: 120 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Number of Channels: 2 Channel

Operating Frequency: 1 GHz

Transistor Polarity: Dual N-Channel

Vgs - Gate-Source Voltage: - 8 V, + 10 V

Id - Continuous Drain Current: 2.5 A

Maximum Operating Temperature: + 200 C

Rds On - Drain-Source Resistance: 1 Ohms

Vds - Drain-Source Breakdown Voltage: 95 V

Vgs th - Gate-Source Threshold Voltage: 2.8 V