SiC MOSFETS MOSFET công suất silicon carbide cấp ô tô 650 V, 40 mOhm điển hình, 30 A STMicroelectronics SCT040HU65G3AG

Fall Time: 35.5 ns

Rise Time: 4 ns

Technology: SiC

Unit Weight: 2.320 g

Channel Mode: Enhancement

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 36 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 266 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 57 ns

Id - Continuous Drain Current: 7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 40 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 5 V