SiC MOSFETS MOSFET công suất Silicon carbide 1200 V, 20 A, 189 mOhm STMicroelectronics SCT20N120H

Fall Time: 17 ns

Rise Time: 16 ns

Compliance: Done

Technology: SiC

Unit Weight: 1.380 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 45 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 175 W

Vgs - Gate-Source Voltage: - 10 V, + 25 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 27 ns

Id - Continuous Drain Current: 20 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 239 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.5 V