MOSFET N-Kênh 500 Vôn 12 Ampe STMicroelectronics STB12NM50T4

Width: 9.35 mm

Height: 4.6 mm

Length: 10.4 mm

Rise Time: 10 ns

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 28 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 160 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 20 ns

Id - Continuous Drain Current: 12 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Forward Transconductance - Min: 5.5 S

Rds On - Drain-Source Resistance: 350 mOhms

Vds - Drain-Source Breakdown Voltage: 500 V

Vgs th - Gate-Source Threshold Voltage: 5 V