MOSFET kênh N 600 V, điện trở típ 0,108 Ohm, dòng 26 A MDmesh M2 Power trong vỏ D2PAK STMicroelectronics STB33N60M2

Fall Time: 9 ns

Rise Time: 9.6 ns

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 45.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 190 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 16 ns

Typical Turn-Off Delay Time: 109 ns

Id - Continuous Drain Current: 26 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 125 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 3 V