MOSFET kênh P 30 V, 0.01 Ohm điển hình 52 A STripFET H6 Power MOSFET STMicroelectronics STD52P3LLH6

Fall Time: 45 ns

Rise Time: 112 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 33 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 70 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 12.8 ns

Typical Turn-Off Delay Time: 61 ns

Id - Continuous Drain Current: 52 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 10 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V