Transistor IGBT PowerMESH TM IGBT STMicroelectronics STGB6NC60HDT4

Width: 9.35 mm

Height: 4.6 mm

Length: 10.4 mm

Technology: Si

Unit Weight: 2.240 g

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 62.5 W

Continuous Collector Current: 12 A

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 15 A

Collector-Emitter Saturation Voltage: 2.7 V

Continuous Collector Current at 25 C: 15 A