MOSFET N-Kênh 60V 0.0016 Ohm 180A STripFET DG VI STMicroelectronics STH260N6F6-2

Fall Time: 62.6 ns

Rise Time: 165 ns

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 183 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 120 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2.4 mOhms

Vds - Drain-Source Breakdown Voltage: 75 V

Vgs th - Gate-Source Threshold Voltage: 4 V