MOSFET kênh N 600 V, 0.135 Ohm điển hình 22 A MDmesh M2 Power trong gói D2PAK STMicroelectronics STI28N60M2

Fall Time: 8 ns

Rise Time: 7.2 ns

Technology: Si

Unit Weight: 1.460 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 36 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 170 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 14.5 ns

Typical Turn-Off Delay Time: 100 ns

Id - Continuous Drain Current: 22 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 135 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 2 V