MOSFET N-Kênh 650V 0.215 Ohm điển hình 12.5A MDmeshM5 STMicroelectronics STL19N65M5

Fall Time: 9 ns

Rise Time: 7 ns

Technology: Si

Unit Weight: 15 g

Channel Mode: Enhancement

Configuration: Triple

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 31 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 90 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 36 ns

Typical Turn-Off Delay Time: 11 ns

Id - Continuous Drain Current: 12.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 240 mOhms

Vds - Drain-Source Breakdown Voltage: 710 V

Vgs th - Gate-Source Threshold Voltage: 4 V