MOSFET kênh N 600 V, 125 mOhm điển hình 21 A MDmesh DM6 MOSFET công suất PowerFLAT 8x8 HV p STMicroelectronics STL33N60DM6

Fall Time: 35 ns

Rise Time: 9 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 35 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 150 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 14 ns

Typical Turn-Off Delay Time: 7 ns

Id - Continuous Drain Current: 21 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 140 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 3.25 V