MOSFET kép N-Ch 30V 11A 0.016 Ohm STripFET V STMicroelectronics STL40DN3LLH5

Fall Time: 2.8 ns

Rise Time: 22 ns

Technology: Si

Unit Weight: 76 mg

Channel Mode: Enhancement

Configuration: Dual

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 4.5 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 60 W

Vgs - Gate-Source Voltage: - 22 V, + 22 V

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 16 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V