MOSFET công suất PowerMESH STMicroelectronics STP4N150

Width: 4.6 mm

Height: 9.15 mm

Length: 10.4 mm

Fall Time: 45 ns

Rise Time: 30 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 50 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 160 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 35 ns

Typical Turn-Off Delay Time: 45 ns

Id - Continuous Drain Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3.5 S

Rds On - Drain-Source Resistance: 5 Ohms

Vds - Drain-Source Breakdown Voltage: 1.5 kV

Vgs th - Gate-Source Threshold Voltage: 3 V