BJTs - Transistor Lưỡng Cực NPN Điện Áp Cao 700Vces 400Vceo 3A STMicroelectronics STU13005N

Technology: Si

Unit Weight: 4 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 30 W

DC Current Gain hFE Max: 24

Emitter- Base Voltage VEBO: 9 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 8

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 500 mV