MOSFET kênh N 1050 V, 1.4 Ohm điển hình 4 A MDmesh K5 Power trong gói IPAK STMicroelectronics STU7N105K5

Fall Time: 25 ns

Rise Time: 7 ns

Technology: Si

Unit Weight: 340 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 17 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 110 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 17.5 ns

Typical Turn-Off Delay Time: 43 ns

Id - Continuous Drain Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2 Ohms

Vds - Drain-Source Breakdown Voltage: 1.05 kV

Vgs th - Gate-Source Threshold Voltage: 3 V