MOSFETs Automotive-grade N-channel 650V, 90 mOhm 28A MDmesh DM6 MOSFET công suất STMicroelectronics STWA30N65DM6AG

Fall Time: 7 ns

Rise Time: 21 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: Through Hole

Transistor Type: 1 N - Channel

Qg - Gate Charge: 46 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 284 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 18 ns

Typical Turn-Off Delay Time: 46 ns

Id - Continuous Drain Current: 28 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 110 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4.75 V